Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4), 357-358
- https://doi.org/10.1049/el:19960206
Abstract
The authors report on the improved microwave performance of short AlGaN/GaN doped channel heterostructure field effect transistors. These transistors with 0.25 µm gates have a cutoff frequency fT up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation frequency fmax ≃ 70.8 GHz. This value of fT is the highest value reported for any wide-bandgap semiconductor device.Keywords
This publication has 3 references indexed in Scilit:
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995
- Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistorApplied Physics Letters, 1994
- AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistorsIEEE Transactions on Electron Devices, 1990