Reactor pressure dependence of properties of undoped ZnSe grown by low-pressure omvpe
- 28 February 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (1), 169-172
- https://doi.org/10.1016/0022-0248(85)90058-2
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
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- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- High-conductivity heteroepitaxial ZnSe filmsApplied Physics Letters, 1980
- Near-band-edge photoluminescence in ZnSe grown from indium solutionJournal of Applied Physics, 1980
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978