Electron Tunneling into Intermediate-Valence Materials
Open Access
- 4 October 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 49 (14), 1030-1033
- https://doi.org/10.1103/PhysRevLett.49.1030
Abstract
Electron tunneling spectra of TmSe, SmS, Sm, and Ce have been measured with the GaAs Schottky-barrier probe tunneling method. Antiferromagnetic TmSe shown an energy gap meV, in situ pressure-transformed metallic SmS exhibits a gap of 1.7 meV, and Sm shows a gap of 2.7 meV, which is independent of magnetic field. For Ce an inelastic excitation is found near ± 14 meV, which is absent in Y.
Keywords
This publication has 14 references indexed in Scilit:
- Metallic Point-Contact Spectra of Valence Fluctuation CompoundsPhysical Review Letters, 1982
- Point-contact spectroscopy on SmB6, TmSe, LaB6 and LaSeSolid State Communications, 1982
- Optical Structure near 20 meV in Valence-Fluctuation CompoundsPhysical Review Letters, 1981
- Electrical and thermal conductivity of CePd3, YPd3, GdPd3 and some dilute alloys of CePd3 with Y and GdZeitschrift für Physik B Condensed Matter, 1981
- Pressure Study of the Metal-Insulator Transition in TmSePhysical Review Letters, 1980
- MIXED VALENT SEMICONDUCTORS : SmB6Le Journal de Physique Colloques, 1980
- Valence instabilities of Tm in its compounds and solid solutionsLe Journal de Physique Colloques, 1979
- Rare-earth compounds with mixed valenciesPhilosophical Magazine, 1974
- Preparation and lattice parameters of the rare earth tetraboridesMaterials Research Bulletin, 1972
- Schottky Barrier Probe Tunneling into SuperconductorsJournal of Applied Physics, 1970