The morphology of As terminated Si(111) from desorption kinetics
- 31 December 1988
- journal article
- Published by Elsevier in Surface Science
- Vol. 197 (1-2), 1-10
- https://doi.org/10.1016/0039-6028(88)90568-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Overlayer energetics from thermal desorption on SiSurface Science, 1987
- Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surfacePhysical Review B, 1987
- Arsenic overlayer on Si(111): Removal of surface reconstructionPhysical Review B, 1986
- Structural analysis of Si(111)-7×7 by UHV-transmission electron diffraction and microscopyJournal of Vacuum Science & Technology A, 1985
- Thermal desorption of Xe from the W(110) planeSurface Science, 1981
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Recent advances in epitaxyThin Solid Films, 1972
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967
- The Importance of Complex Gaseous Molecules in High Temperature SystemsThe Journal of Physical Chemistry, 1955