Growth of group III nitrides on Si(111) by plasma-assisted molecular beam epitaxy

Publisher Website

1 March 1994

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Vol. 12 (2), 1186-1189
https://doi.org/10.1116/1.587039

Abstract

No abstract available

Keywords

MOLECULAR BEAM EPITAXY

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