Automated measurement and analysis of MIS interfaces in narrow-bandgap semiconductors

1 May 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (5), 546-551
https://doi.org/10.1109/t-ed.1981.20380

Abstract

A computerized system for simultaneous measurement of high-frequency and quasi-static MIS capacitance is described. The importance of this simultaneity in the application of various analysis methods to MIS devices in narrow-bandgap semiconductors is discussed. Results on the interfaces of mercury-cadmium-telluride with zinc sulfide and anodic oxide are given.

Keywords

VOLTMETERS
VOLTAGE
MAXWELL BOLTZMANN DISTRIBUTION
HYSTERESIS
CAPACITORS

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