Voltage-Annealing of Radiation Damage in Tunnel Diodes

Abstract

A unique radiation-damage annealing process has been observed at 78°K in tunnel diodes bombarded with high energy electrons. Approximately one half of the radiation-induced excess current in germanium tunnel diodes can be permanently removed by application of forward bias voltages. This ``voltage-annealing'' effect arises from the enhanced migration of charged lattice defects under the influence of the high electric fields present in degenerate semiconductor junctions. A tentative model, based on known deep-lying radiation damage levels, is proposed. Under suitable conditions of forward bias, a charged interstitial can be dissociated from its adjacent paired vacancy, allowing the now isolated interstitial to be swept from the junction region with an estimated activation energy of 0.25 eV.