Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects
- 1 February 2008
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 77 (8), 085301
- https://doi.org/10.1103/physrevb.77.085301
Abstract
We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness disorder, using an efficient real-space, order Kubo-Greenwood approach and a Landauer-Büttiker Green’s function method. Different transport regimes (from quasiballistic to localization) are explored depending on the length of the nanowire and the characteristics of the surface roughness profile. Quantitative estimates of the elastic mean free paths, charge mobilities, and localization lengths are provided as a function of the correlation length of the surface roughness disorder. Moreover, the limitations of the Thouless relation between the mean free path and the localization length are outlined.
Keywords
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