Electrical instabilities in organic semiconductors caused by trapped supercooled water
- 20 February 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (8), 082101
- https://doi.org/10.1063/1.2178410
Abstract
It is reported that the electrical instability known as bias stress is caused by the presence of trapped water in the organic layer. Experimental evidence as provided by the observation of an anomaly occurring systematically at around . This anomaly is observed in a variety of materials, independent of the deposition techniques and remarkably coincides with a known phase transition of supercooled water. Confined water does not crystallize at but forms a metastable liquid. This metastable water behaves electrically as a charge trap, which causes the instability. Below the water finally solidifies and the electrical traps disappear.
Keywords
This publication has 19 references indexed in Scilit:
- Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effectsApplied Physics Letters, 2005
- Electrical characterization of organic based transistors: stability issuesPolymers for Advanced Technologies, 2005
- Kinetics of bias stress and bipolaron formation in polythiophenePhysical Review B, 2004
- Electronic transport in field-effect transistors of sexithiopheneJournal of Applied Physics, 2004
- Bias-induced threshold voltages shifts in thin-film organic transistorsApplied Physics Letters, 2004
- Bipolaron mechanism for bias-stress effects in polymer transistorsPhysical Review B, 2003
- Electrical Characterization of Vacuum Deposited and Solution Processed DH4T Thin Film TransistorsMRS Proceedings, 2003
- Bias-stress induced instability of organic thin film transistorsSynthetic Metals, 1999
- Charge trapping instabilities of sexithiophene Thin Film TransistorsSynthetic Metals, 1999
- Field-effect transistors made from solution-processed organic semiconductorsSynthetic Metals, 1997