Electrical Switching in Mobility-Gap Materials

Abstract

A new model for electrical switching is proposed which is based on the mobility-gap band model developed by Cohen et al., for chalcogenide materials and the electron tunneling through an insulating layer on these materials. Numerical calculations of current-voltage relations show that the switching characteristics depend on a factor with which the tunnel current is determined. Dependence of threshold field on the thickness of specimens is in agreement with experimental observations.