Humidity-sensitive threshold switching in silver–boron nitride–silicon–aluminum sandwiches
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4), 333-335
- https://doi.org/10.1063/1.90360
Abstract
Conduction of polycrystalline boron nitride films in a form of a Ag‐BN‐Si‐Al sandwich has been investigated. After electroforming, the samples exhibit threshold switching in atmospheres which contain moisture. The switching is well explained by Dearnaley’s filamentary model.This publication has 2 references indexed in Scilit:
- Negative resistance in ion−implanted Al−Al2O3−Au junctionsApplied Physics Letters, 1975
- A model for filament growth and switching in amorphous oxide filmsJournal of Non-Crystalline Solids, 1970