Tunneling Model for Electron Transport and Its Temperature Dependence in Crystals of Low Carrier Mobility. Example: Anthracene
- 15 May 1962
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 36 (10), 2640-2643
- https://doi.org/10.1063/1.1732345
Abstract
A tunneling model is used to explain electron transport in crystals of low carrier mobility. Temperature is incorporated into the model by allowing the barrier width to vary sinusoidally as a result of lattice vibrations. The maximum amplitude of vibration is proportional to T½. The resulting expression for the mobility exhibits a linear temperature dependence. The model can also be used to estimate the width of the conduction band. The calculated results are compared with experimental results on anthracene, and the agreement is quite good for the mobility but not as good for the temperature dependence.Keywords
This publication has 7 references indexed in Scilit:
- The Hole Mobility in SeleniumProceedings of the Physical Society, 1960
- Charge Carrier Production and Mobility in Anthracene CrystalsPhysical Review B, 1960
- Hole and Electron Drift Mobilities in AnthraceneThe Journal of Chemical Physics, 1960
- The semiconductivity of organic substances. Part 6.—A range of proteinsTransactions of the Faraday Society, 1960
- Organic Photoconductors. V. A Model for Photoconductivity in Cationic DyesThe Journal of Chemical Physics, 1959
- Electrical Properties of-Physical Review B, 1954
- The Two-Minima Problem and the Ammonia MoleculePhysical Review B, 1932