Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx

Abstract

Earlier work on III–V semiconductor lasers has shown that stimulated emission occurs on band‐to‐band transitions or via transitions involving donors or acceptors. Based on the behavior of the N isoelectronic trap in promoting efficient carrier recombination in GaP, the present work shows that the N isoelectronic trap in GaAs_1−xP_x is distinct and over part of the composition range x it can be operated in recombination in the stimulated emission (laser) regime, thus establishing a fundamental new laser transition in a III−V semiconductor. These results (4.2 and 77°K) are obtained by means of optical pumping of lightly doped n‐type samples of estimated high nitrogen concentration.