A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (5), 615-622
- https://doi.org/10.1109/16.2503
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Refractory self-aligned gate technology for GaAs microwave FETs and MMICSElectronics Letters, 1987
- Comparison of low temperature and high temperature refractory metal/silicides self-aligned gate on GaAsJournal of Vacuum Science & Technology B, 1986
- Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solutionElectronics Letters, 1985