A low drift fully integrated MOSFET operational amplifier
- 1 August 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (4), 499-503
- https://doi.org/10.1109/jssc.1978.1051084
Abstract
A fully integrated MOSFET amplifier with very low drift has been built using standard technology. Input offset voltages as low as 5 /spl mu/V and drift values of this offset voltage less than 0.05 /spl mu/V//spl deg/C are measured.Keywords
This publication has 1 reference indexed in Scilit:
- Low-level MOS transistor amplifier using storage techniquesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973