InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- 1 September 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (9), L551
- https://doi.org/10.1143/jjap.19.l551
Abstract
InAsSbP-InAs superlattices were grown by organometallic vapor phase epitaxial growth. The superlattice periods were obtained by X-ray diffraction measurements. The compositional depth profiles were observed by Auger electron spectroscopy and simultaneous argon-ion sputter etching. The chemical interface layer width was measured to be less than 60 A for the superlattice with a 335 A period. The results suggest that organometallic vapor phase epitaxy is one of the most useful methods for the growth of high quality superlattices.Keywords
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