A semi-insulated gate gallium-arsenide field-effect transistor

Abstract

Proton bombardment has been used to make a semi-insulated gate gallium-arsenide field-effect transistor. This technique combines the simplicity of the metal semiconductor FET technique, the advantage of operating the device using positive as well as negative bias on the gate, and the possible use of higher conductivity material for the channel, which may result in a higher transconductance and a higher saturated current density.