Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (15), 1374-1375
- https://doi.org/10.1049/el:19960921
Abstract
We report the room-temperature operating characteristics of InGaAs/GaAs self-organised quantum dot lasers grown by molecular beam epitaxy. The emission wavelength is 1.028 µm and Jth = 650 A/cm2 for a 90 µm × 1 mm broad-area laser. Steady-state and time-resolved photoluminescence measurements confirm that lasing occurs through the e1-hh2 higher-order transition, and the spontaneous recombination time for this transition is ≃ 200 ps.Keywords
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