A novel semiconductor NO gas sensor operating at room temperature
- 25 June 1998
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 49 (1-2), 58-62
- https://doi.org/10.1016/s0925-4005(98)00129-4
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Preparation and micro-structural characterization of nanosized thin film of TiO2WO3 as a novel material with high sensitivity towards NO2Sensors and Actuators B: Chemical, 1996
- Cross sensitivity and stability of NO2 sensors from WO3 thin filmSensors and Actuators B: Chemical, 1996
- Metal oxide semiconductor NO2 sensorSensors and Actuators B: Chemical, 1995
- WO3 sputtered thin films for NOx monitoringSensors and Actuators B: Chemical, 1995
- H2S response of WO3 thin-film sensors manufactured by silicon processing technologySensors and Actuators B: Chemical, 1994
- Tungsten oxide-based semiconductor sensor for detection of nitrogen oxides in combustion exhaustSensors and Actuators B: Chemical, 1993
- Microelectrochemical sensor for nitrogen oxidesSensors and Actuators B: Chemical, 1993
- Development of high-performance solid-electrolyte sensors for NO and NO2Sensors and Actuators B: Chemical, 1993
- Physical Properties of Tungsten Oxide Films Deposited by a Reactive Sputtering MethodJapanese Journal of Applied Physics, 1991
- Electrical properties of tungsten trioxide filmsJournal of Vacuum Science & Technology A, 1990