Displaced abrupt barrier and self-consistency of dangling-bond surface states
- 28 August 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (16), L429-L432
- https://doi.org/10.1088/0022-3719/9/16/004
Abstract
It is argued that, since the average phase of the wavefunction is uniquely fixed by charge neutrality, for the purpose of calculating dangling-bond surface states in narrow-gap semiconductors, a self-consistent barrier can be replaced by a suitably displaced abrupt barrier. This yields a simple scheme which can be used to calculate the eigenvalue E(k) for any desired k. Calculations are carried our for Si and Ge, and compared with self-consistent calculations where available.Keywords
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