Defining the ``Random'' Spectrum as Used in the Channeling Technique of Nuclear Backscattering
- 15 February 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (4), 178-179
- https://doi.org/10.1063/1.1654099
Abstract
A new method is described for operationally defining a ``random'' spectrum as used in channeling studies of nuclear backscattering. The method is reproducible to 1%. A detailed analysis is made for the case of He4 ions backscattered from silicon crystals. Corrections are determined so the ``random'' spectrum approximates that from an amorphous layer to within ± 1%.Keywords
This publication has 4 references indexed in Scilit:
- Determination of Surface Impurity Concentration Profiles by Nuclear BackscatteringJournal of Applied Physics, 1971
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967