The effect of electron interaction on the band gap of extrinsic semiconductors

Abstract

The change in the band gap of a semiconductor due to high doping is considered in the limit where the free carriers form a degenerate gas. In contrast to previous treatments, the effect of the change in the electron interaction on the whole band structure is considered within a self energy framework so that the difference between valence and conduction bands can be found more accurately. The results obtained are significantly different, in some aspects, from earlier work. This is discussed and the application to experiment reviewed.