Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors

1 June 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (6), 1160-1164
https://doi.org/10.1109/t-ed.1980.20000

Abstract

In this paper we present an analysis of the HF capabilities of GaAlAs/GaAs heterojunction transistors, a description of the technological characteristics of the samples processed by liquid-phase epitaxial technique for UHF applications, and a report of the experimental results already obtained.

Keywords

CURRENT DENSITY
FABRICATION
GALLIUM ARSENIDE
CUTOFF FREQUENCY
CAPACITANCE
HETEROJUNCTIONS

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