A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (5), 782-791
- https://doi.org/10.1109/16.568040
Abstract
A novel charge-pumping method using dc source/drain biases and specified gate waveforms is proposed to extract the lateral distributions of interface-trap and effective oxide-trapped charge densities. The surface potential redistribution due to the oxide-trapped charges is treated by an iteration process in order to accurately determine their lateral distributions. The proposed novel method is feasible for accurately extracting the distributions of interface-trap and effective oxide-trapped charge densities generated by the hot-carrier stress and can be further used to predict the device lifetimeKeywords
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