GaS and GaSe Ultrathin Layer Transistors

Abstract

Room‐temperature, bottom‐gate, field‐effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n‐and p‐type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.