High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- 1 August 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (8B), L1059
- https://doi.org/10.1143/jjap.36.l1059
Abstract
The continuous-wave operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100° C and a long lifetime of 300 hours. The characteristic temperature of the threshold current was as high as 170 K. The emission wavelength of the LDs was 416 nm.Keywords
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