Resonant tunneling hot-electron transistor with current gain of 5
- 29 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (26), 1779-1780
- https://doi.org/10.1063/1.97242
Abstract
By optimizing its structure, we have improved the current gain and collector-current peak-to-valley ratio of a resonant tunneling hot-electron transistor. The device has an asymmetric resonant tunneling barrier with an optimal well thickness to attain a higher peak-to-valley ratio for the collector current. Also, the device uses a graded collector barrier and decreased base thickness, exhibiting a common emitter current gain of 5.1 (at 77 K), the highest value ever reported for an AlGaAs/GaAs hot-electron transistor.Keywords
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