Resonant tunneling hot-electron transistor with current gain of 5

Abstract

By optimizing its structure, we have improved the current gain and collector-current peak-to-valley ratio of a resonant tunneling hot-electron transistor. The device has an asymmetric resonant tunneling barrier with an optimal well thickness to attain a higher peak-to-valley ratio for the collector current. Also, the device uses a graded collector barrier and decreased base thickness, exhibiting a common emitter current gain of 5.1 (at 77 K), the highest value ever reported for an AlGaAs/GaAs hot-electron transistor.