Abstract
Two major areas of technological advance in digital integrated circuits are: 1) increasing speed for a given power dissipation, and 2) decreasing area per gate function leading to the development of more complex single-chip units. The DTL circuits and subsystems described develop these trends to faster and more complex DTL single-chip logic functions. The application of the monolithic thin-film compatible technology with p-n junction isolation enables propagation delay times of 4.5 ns at 11.7 mW to be achieved in the basic DTL gates. The basic die topology described is well suited to the formation of monolithic single-chip DTL binary elements, full adders, multibit counters, and shift registers.

This publication has 3 references indexed in Scilit: