Liquid-phase epitaxy of ZnSe by temperature difference method
- 30 September 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (1-2), 178-182
- https://doi.org/10.1016/0022-0248(82)90321-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressureIEEE Transactions on Electron Devices, 1975
- Luminescence in highly conductive n-type ZnSeJournal of Applied Physics, 1975
- The luminescence of self-activated and copper-doped zinc selenideJournal of Luminescence, 1974
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973
- Properties of Sn-doped GaAsJournal of Applied Physics, 1973
- Excitons and the Absorption Edge in ZnSePhysical Review B, 1967