Luminescence of traps in electron-irradiated gallium-doped silicon

Abstract

Photoluminescence measurements are presented for a series of lines observed in Ga-doped silicon. The defect responsible for the luminescence has recombination properties which indicate that the responsible center is a highly radiative neutral trap. Two dominate lines are observed from a spin-singlet, spin-triplet pair. A model based on the properties of a trapped interstitial is postulated to explain the observed structure.