Negative differential resistances from Hg1−xCdxTe-CdTe single quantum barrier heterostructures

Abstract

A novel negative differential resistance device is proposed and analyzed theoretically. The proposed device is a Hg_1−xCd_xTe‐CdTe‐Hg_1−xCd_xTe single quantum barrier heterostructure with 0.2≤x≤0.4. The anticipated negative differential resistance is a consequence of the unique properties of Hg_1−xCd_xTe‐CdTe heterojunctions. Calculations are performed to predict the current‐voltage characteristics of the proposed device. The results indicate that room‐temperature negative differential resistances can be obtained over a large range of applied voltages. The high‐speed capabilities associated with quantum barrier tunnel structures make the proposed device a candidate for high‐frequency applications.