Simple I/V model for short-channel i.g.f.e.t.s in the triode region

Abstract

The standard 1-dimensional model for an i.g.f.e.t. in the triode region predicts values of the drain current ID that fall increasingly below experimental values as the channel is shortened or as the drain voltage VD is increased. However, a strictly 2-dimensional treatment results in prohibitive computation. A model is described that takes into account fringing fields at each end of the channel and which requires a relatively simple numerical solution of two nonlinear equations. Experiments on p channel i.g.f.e.t.s with gate lengths of 1.6 to 7.8 μm show that this model predicts I/V characteristics much better than does the standard 1-dimensional model which includes the bulk charge.