Exciton states in the GaAs/Ga1−xAlxAs corrugated superlattices grown on (311)-oriented substrates

Abstract

The exciton states in GaAs/${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$ ${\mathrm{Al}}_{\mathit{x}}$As corrugated superlattices (CSL’s) and in simple superlattices (SL’s) are comparatively studied in the framework of the effective-mass envelope-function method. The exciton binding energies are calculated for various well widths, and a redshift is found for the CSL in comparison with the SL. Our results agree with the available experimental data.