X-Ray Double Crystal Diffractometry of Multiple and Very Thin Heteroepitaxial Layers

Abstract

The intense interest in production of heteroepitaxial quaternary structures of Ga_x In_1-x As_y p_1-y on InP for electro-optical telecommunications systems has Stimulated development of non-destructive techniques for their analysis. One of the most important is double axis X-ray diffractometry, a technique originally developed in the 1920s but only now coming into widespread use as a routine assessment tool. The basic theory is well treated by James and discussion of alignment errors are found in references cited by Fewster in a paper describing alignment procedures for the automated diffractometer manufactured by Bede Scientific Instruments of Durham, The application to III-V systems has been discussed by Tanner, Barnett and Bill.