Recombination, Attachment, and Ambipolar Diffusion of Electrons in Photo-Ionized NO Afterglows
- 5 August 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 172 (1), 198-206
- https://doi.org/10.1103/PhysRev.172.198
Abstract
Photo-ionized plasma afterglows of NO have been studied by combined microwave and mass-spectrometric techniques. Nitric-oxide-neon mixtures (5-65 mTorr NO, 2-7 Torr Ne) are contained in a 10-cm resonant cavity where they are ionized by a "single pulse" of Lyman- radiation. A temporal spectrum of ions diffusing to the wall is obtained by a differentially pumped mass spectrometer and multichannel analyzer. Analysis of the electron-density decay curves obtained by microwave techniques to obtain an electron-ion recombination coefficient for N is complicated by the conversion of N to the dimer ion, . At sufficiently low densities of nitric oxide the concentration becomes negligible, and the N wall current tracks the electron-density decay. From comparisons of experimental electron-density decay curves obtained under recombination-controlled conditions, with computer solutions of the electron-continuity equation, the values /sec, at K, respectively, are obtained. From analysis of electron-density decay curves at higher densities of NO, where is the dominant ion, the value /sec at K is obtained. The three-body electron-attachment and ambipolar diffusion coefficients have been measured in pure NO (0.1-5 Torr) and are found to be /sec and Torr/sec, respectively, at K.
Keywords
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