On the shot effect of p-n junctions

1 November 1952

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Transactions of the IRE Professional Group on Electron Devices

Vol. PGED-1 (1), 20-24
https://doi.org/10.1109/irepged.1952.6811054

Abstract

Noise measurements on two p-n junctions, biased in the forward direction, have been carried out between 1 kc and 64 kc for a wide range of currents (0–1000 μA). Several other properties of the junction which might help in interpreting our noise data were also measured. Both junctions were almost identical.

Keywords

NOISE
CURRENT MEASUREMENT
RESISTANCE
P-N JUNCTIONS
TEMPERATURE MEASUREMENT
ELECTRICAL RESISTANCE MEASUREMENT

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