Hydrogen treatment effect on shallow and deep centers in GaSb
- 16 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (11), 1318-1320
- https://doi.org/10.1063/1.107329
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Charge state and hydrogen levels position in different III–V materialsPhysics Letters A, 1989
- On the scaling of an ion-implanted silicon MESFETSolid-State Electronics, 1989
- Hydrogen in Crystalline SemiconductorsAnnual Review of Materials Science, 1988
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Hydrogenation of shallow-donor levels in GaAsJournal of Applied Physics, 1986
- Injection InGaSbAs lasers emitting radiation of wavelengths 1.9–2.3μ at room temperatureSoviet Journal of Quantum Electronics, 1985
- Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μmElectronics Letters, 1985
- A universal trend in the binding energies of deep impurities in semiconductorsApplied Physics Letters, 1984