Reduction of electron and hole trapping in SiO2 by rapid thermal annealing
- 1 December 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11), 1204-1206
- https://doi.org/10.1063/1.95098
Abstract
Reduction of electron or hole trapping in SiO2 was achieved by short‐time lamp annealing. The trapping characterization was done by the avalanche injection technique on metal‐oxide‐silicon capacitor structures with aluminum gates and SiO2 thickness of 50 nm. Electron trapping on water related centers is reduced by 10‐s anneals in Ar or N2 ambients at 600–800 °C. Hole trapping is reduced by short anneals in an O2 ambient at 1000 °C with an optimal time of 100 s. The O2 short anneal is much more effective if the oxide had a long post‐oxidation anneal in N2 at 1000 °C which produces an interfacial nitrogen‐rich layer at the Si‐SiO2 interface.Keywords
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