Abstract
We have determined the surface stress induced by the room-temperature adsorption of oxygen on Si(111) and Si(100) surfaces. As a result of the breaking of the Si-Si bonds and the formation of the Si-O-Si bonds, both surfaces exhibit a measurable stress. Whereas the system O-Si(111) shows a compressive stress of -7200 dyn/cm, the adsorption of oxygen on a Si(100) surface leads to a tensile stress of +260 dyn/cm per monolayer oxygen coverage. The experimental results are in decent agreement with a simple cluster calculation using a valence-bond model.

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