Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11R)
- https://doi.org/10.1143/jjap.31.3662
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- Kinetics of arsenic activation and clustering in high dose implanted siliconApplied Physics Letters, 1986
- Thermodynamics of Deep Levels in SemiconductorMRS Proceedings, 1985
- Nonthermal pulsed laser annealing of Si; plasma annealingPhysics Letters A, 1979
- Defect Chemistry in Crystalline SolidsAnnual Review of Materials Science, 1977
- Method of growing ofp-type GaN in nonequilibrium conditionsPhysical Review B, 1977
- Indirect doping as a possibility for Obtaining p-type conductivity CdSPhysica Status Solidi (a), 1977
- Epitaxial Growth of Undoped and Mg-Doped GaNJapanese Journal of Applied Physics, 1976
- Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gapsPhysical Review B, 1976