High-performance Al0.48In0.52As/Ga0.47In0.53As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates
- 1 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (23), 1561-1563
- https://doi.org/10.1049/el:19891049
Abstract
We report the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GalnAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260mS/mm. An excellent receiver response to l.7Gbit/s NRZ signals has been obtained.Keywords
This publication has 1 reference indexed in Scilit:
- Optoelectronic integrated circuits for high speed computer networksPublished by Optica Publishing Group ,1989