III-nitride blue microdisplays

Abstract

Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of $\text{0.5×0.5\hspace{0.05em}}{\mathrm{mm}}^{\mathrm{2}}$ and consists of $\text{10×10}$ pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current $\mathrm{(L–I)}$ characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems.