GaN microdisk light emitting diodes
- 31 January 2000
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (5), 631-633
- https://doi.org/10.1063/1.125841
Abstract
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.Keywords
This publication has 7 references indexed in Scilit:
- Room Temperature Lasing at Blue Wavelengths in Gallium Nitride MicrocavitiesScience, 1999
- Optical resonance modes in GaN pyramid microcavitiesApplied Physics Letters, 1999
- Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavitiesApplied Physics Letters, 1999
- Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowthApplied Physics Letters, 1998
- Optical modes within III-nitride multiple quantum well microdisk cavitiesApplied Physics Letters, 1998
- Optical properties of GaN/AlGaN multiple quantum well microdisksApplied Physics Letters, 1997
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994