Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well
- 1 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (20), 1265-1267
- https://doi.org/10.1049/el:20010844
Abstract
Wavelength dependence of the intersubband absorption saturation in InGaAs/AlAsSb quantum wells is presented. Large intersubband nonlinearity at 1.72 µm with the estimated saturation intensity as low as 4 MW/cm2 was observed.Keywords
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