Impact ionization and light emission in AlGaAs/GaAs HEMT's
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (8), 1849-1857
- https://doi.org/10.1109/16.144674
Abstract
Impact ionization and light emission phenomena have been studied in AlGaAs/GaAs HEMT's biased at high drain voltages by measuring the gate excess current due to holes generated by impact ionization and by analyzing the energy distribution of the light emitted from devices in the 1.1-3.1 eV energy range. The emitted spectra in this energy range can be divided into three energy regions: i) around 1.4 eV light emission is dominated by band-to-band recombination between cold electrons and holes in GaAs; ii) in the energy range from 1.5 to 2.6 eV energy distribution of the emitted photons is approximately Maxwellian; iii) beyond 2.6 eV the spectra are markedly distorted due to light absorption in the n+ GaAs cap layer. The integrated intensity of photons with energies larger than 1.7 eV is proportional to the product of the drain and gate currents. This suggests recombination of channel electrons with holes generated by impact ionization as the dominant emission mechanism of visible lightKeywords
This publication has 33 references indexed in Scilit:
- Hot carrier induced photon emission in submicron GaAs devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Carrier transport in HEMT's analyzed by high-field electroluminescenceIEEE Electron Device Letters, 1991
- The evaluation of the activation energy of interface state generation by hot-electron injectionIEEE Transactions on Electron Devices, 1991
- Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETsElectronics Letters, 1991
- Evaluation technology of VLSI reliability using hot carrier luminescenceIEEE Transactions on Semiconductor Manufacturing, 1991
- Mechanisms for the emission of visible light from GaAs field-effect transistorsApplied Physics Letters, 1990
- New detection method of hot-carrier degradation using photon spectrum analysis of weak luminescence on CMOS VLSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Electromagnetic radiation from hot carriers in FET-devicesSolid-State Electronics, 1989
- A simple method to characterize substrate current in MOSFET'sIEEE Electron Device Letters, 1984
- Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980