UNIDIRECTIONAL CHANNELING AND BLOCKING: A NEW TECHNIQUE FOR DEFECT STUDIES
- 1 November 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (9), 305-307
- https://doi.org/10.1063/1.1653009
Abstract
This letter reports measurements of a new type of double alignment channeling process which simultaneously uses the ``channeling effect'' and ``blocking effect'' in a relatively simple geometry. Results for the case of 500‐keV He ions impinging on ZnO single crystals are shown to be in fair agreement with a calculation of the magnitude of this effect based on the Lindhard model of particle channeling. It is shown that the sensitivity of this measurement to the detection of atoms not on normal lattice sites is a factor of 10–50 greater than in the usual channeling experiment.Keywords
This publication has 5 references indexed in Scilit:
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- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968
- Experimental investigation of orientation dependence of Rutherford scattering yield in single crystalsNuclear Instruments and Methods, 1965
- Blocking Effects in the Emergence of Charged Particles from Single CrystalsPhysical Review Letters, 1965