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Intrinsic and Field-Induced Anisotropy of Si-Doped YIG from 4.2 to 300 K
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Publications
Intrinsic and Field-Induced Anisotropy of Si-Doped YIG from 4.2 to 300 K
Intrinsic and Field-Induced Anisotropy of Si-Doped YIG from 4.2 to 300 K
RC
R. J. Churchill
R. J. Churchill
PF
P. J. Flanders
P. J. Flanders
CG
C. D. Graham
C. D. Graham
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15 March 1971
journal article
Published by
AIP Publishing
in
Journal of Applied Physics
Vol. 42
(4)
,
1451
https://doi.org/10.1063/1.1660288
Abstract
No abstract available
Keywords
RELAXATION TIME
Cited by 3 articles