MOVPE studies for the development of GaInAsP/InP lasers with semi-insulating InP blocking layers

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Abstract
The self-aligned selective regrowth of a GalnAsP/lnP BH laser with semi-insulating InP:Fe by atmospheric-pressure MOVPE is reported. A threshold current of 26 mA and 12mW output power at 100mA are obtained. Very low capacitance values of 3–5 pF are measured, promising excellent high-frequency performance.