High-temperature operation of InGaAs strained quantum-well lasers
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (4), 308-310
- https://doi.org/10.1109/68.82095
Abstract
Strained-layer quantum-well (SQW) laser structures have been investigated for avionics applications requiring high-temperature performance. The authors have successfully demonstrated InGaAs-GaAs SQW lasers capable of CW operation up to 200 degrees C with more than 5 mW single-mode optical power. These lasers have an emission wavelength of approximately=980 nm, threshold current density of 200 A/cm/sup 2/, differential quantum efficiency of 60%, high output power of approximately=1 W with 50 mu m stripe, and characteristic temperature of 130-140 K.Keywords
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