Evidence of detrimental surface effects on GaAs power MESFETs
- 1 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (25-26), 1094-1095
- https://doi.org/10.1049/el:19820747
Abstract
GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects.Keywords
This publication has 2 references indexed in Scilit:
- On the Reliability of Power GaAs FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Reliability of Gold Metallized Commercially Available Power GaAs FETs8th Reliability Physics Symposium, 1979